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Same model may have multiple batches, images only for reference.
IMW65R083M1HXKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IMW65R083M1HXKSA1

Part No IMW65R083M1HXKSA1
Manufacturer Infineon Technologies
Catalog FETs - Single
Description SILICON CARBIDE MOSFET, PG-TO247
Datasheet
IMW65R083M1HXKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1202690-IMW65R083M1HXKSA1
Manufacturer Infineon Technologies
Category Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Series CoolSiC™
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Ultra Librarian 3D Model Ultra Librarian IMW65R083M1HXKSA1 CAD Model

Description

The Infineon Technologies 1202690 is a high-performance N-channel SiCFET (Silicon Carbide) transistor from the CoolSiC™ series.

  • Drain-to-Source Voltage (Vdss): 650V
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Mounting Type: through-hole
  • Status: active product

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