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Same model may have multiple batches, images only for reference.
IMW65R027M1HXKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IMW65R027M1HXKSA1

Part No IMW65R027M1HXKSA1
Manufacturer Infineon Technologies
Catalog FETs - Single
Description MOSFET 650V NCH SIC TRENCH
Datasheet
IMW65R027M1HXKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1202686-IMW65R027M1HXKSA1
Manufacturer Infineon Technologies
Category Discrete Semiconductor Products Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Series CoolSIC™ M1
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 47A (Tc)
Supplier Device Package PG-TO247-3-41
Ultra Librarian 3D Model Ultra Librarian IMW65R027M1HXKSA1 CAD Model

Description

The Infineon Technologies CoolSIC™ M1 is a high-performance N-Channel SiCFET (Silicon Carbide Field Effect Transistor) designed for various applications in the field of discrete semiconductor products.

  • Drain to Source Voltage (Vdss): 650V
  • Maximum Continuous Drain Current (Id) @ 25°C: 47A
  • Series: CoolSIC™
  • Supplier Device Package: PG-TO247-3-41

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