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IMBG120R140M1HXTMA1

Part No IMBG120R140M1HXTMA1
Manufacturer Infineon Technologies
Catalog FETs - Single
Description SICFET N-CH 1.2KV 18A TO263
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1203002-IMBG120R140M1HXTMA1
Manufacturer Infineon Technologies
Category Discrete Semiconductor Products-Transistors FETs, MOSFETs- Single FETs, MOSFETs
Series CoolSiC™
Package Tape & Reel (TR) Cut Tape (CT)
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Rds On (Max) @ Id, Vgs 189mOhm @ 6A, 18V
Supplier Device Package PG-TO263-7-12
Ultra Librarian 3D Model Ultra Librarian IMBG120R140M1HXTMA1 CAD Model

Description

The Infineon Technologies 1203002 is a high-performance N-Channel MOSFET transistor from the CoolSiC™ series.

  • Channel Type: N-Channel
  • Series: CoolSiC™
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Rds On (Max): 189mOhm @ 6A, 18V
  • Package Type: PG-TO263-7-12
  • Product Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $7.9041 $63.2328
18+ $6.4855 $116.7390
28+ $6.2829 $175.9212
38+ $6.0802 $231.0476
50+ $5.8775 $293.8750
66+ $5.2695 $347.7870
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Availability: 5,570 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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