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IKW75N65EL5XKSA1

Part No IKW75N65EL5XKSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 650V 75A FAST DIODE TO247-3 / IGBT 650 V 80 A 536 W Through Hole PG-TO247-3
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Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Infineon Technologies
Series TrenchStop™ 5
Package Tube
Product Status Active
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 80 A
Current - Collector Pulsed (Icm) 300 A
Vce(on) (Max) @ Vge, Ic 1.35V @ 15V, 75A
Power - Max 536 W
Switching Energy 1.61mJ (on), 3.2mJ (off)
Input Type Standard
Gate Charge 436 nC
Td (on/off) @ 25°C 40ns/275ns
Test Condition 400V, 75A, 4Ohm, 15V
Reverse Recovery Time (trr) 114 ns
Temperature Range - Operating -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package PG-TO247-3
Base Product Number IKW75N65
Standard Package 30 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 874499-IKW75N65EL5XKSA1
Ultra Librarian 3D Model Ultra Librarian IKW75N65EL5XKSA1 CAD Model

Description

The IKW75N65EL5XKSA1 is a single IGBT transistor from the TrenchStop™ 5 series.

  • Category: Discrete Semiconductor Products - Transistors - IGBTs
  • Manufacturer: Infineon Technologies
  • Power: 536 W (Max)
  • Reverse Recovery Time (trr): 114 ns
  • Collector-Emitter Breakdown Voltage: 650 V (Max)
  • Collector Current: 80 A (Max)
  • Pulsed Current: 300 A
  • Vce(on): 1.35V @ 15V, 75A
  • Gate Charge: 436 nC
  • Turn-On Time: 40ns @ 25°C
  • Turn-Off Time: 275ns @ 25°C
  • Mounting: Through-Hole
  • Package: TO-247-3
  • Temperature Range: -40°C to 175°C
  • Status: Active

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