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Same model may have multiple batches, images only for reference.
IKW75N65EL5 Infineon Technologies – Price, Stock & Datasheet
Same model may have multiple batches, images only for reference.

IKW75N65EL5

Part No IKW75N65EL5
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description 536W 80A 650V TO-247-3 Single IGBTs RoHS
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Package TO-247-3
Pd - Power Dissipation 536W
Td(off) 275ns
Td(on) 40ns
Operating Temperature -40℃~+175℃
Current - Collector(Ic) 80A
Collector-Emitter Breakdown Voltage (Vces) 650V
Reverse Transfer Capacitance (Cres) 42pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic) 4.2V@1mA
Vce Saturation(VCE(sat)) 1.35V@75A,15V
Reverse Recovery Time(trr) 114ns
Switching Energy(Eoff) 3.2mJ
Turn-On Energy (Eon) 1.61mJ
Input Capacitance(Cies) 12.1nF
Output Capacitance(Coes) 150pF
Gate Charge(Qg) 436nC@15V
Ultra Librarian 3D Model Ultra Librarian IKW75N65EL5 CAD Model

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