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Same model may have multiple batches, images only for reference.
IKW50N60H3 Real Image
Same model may have multiple batches, images only for reference.

IKW50N60H3

Part No IKW50N60H3
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 100A 333W TO247-3
Datasheet
IKW50N60H3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
IGBT Type Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 100A
Pulsed Collector Current 200A
Collector-emitter saturation voltage(Max) 2.3V @ 15V, 50A
Maximum Power Dissipation 333W
Total Switching Energy(Ets) 2.36mJ
Input Type Standard
Gate Charge 315nC
Turn-on and Turn-off delay time 23ns/235ns
Testing Conditions 400V, 50A, 7 Ohm, 15V
Reverse Recovery Time (trr) 130ns
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Win Source Part Number 088070-IKW50N60H3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IKW50N60H3 CAD Model

Description

The Infineon Technologies IKW50N60H3 is a Trench Field Stop insulated gate bipolar transistor (IGBT) that is designed to deliver high performance in a range of applications.

  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Collector Current: 100A
  • Popularity: High

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Quantity Unit Price Ext. Price
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51+ $1.9734 $100.6434
79+ $1.9067 $150.6293
113+ $1.7734 $200.3942
147+ $1.7067 $250.8849
183+ $1.6400 $300.1200
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Availability: 12,000 pieces
MOQ: 24 pcs
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