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Same model may have multiple batches, images only for reference.
IKW30N65H5XKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IKW30N65H5XKSA1

Part No IKW30N65H5XKSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 650V 30A FAST DIODE TO247-3
Datasheet
IKW30N65H5XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
IGBT Type Trench
VCEO Maximum Collector-Emitter Breakdown Voltage 650V
Maximum Current Collector 55A
Pulsed Collector Current 90A
Collector-emitter saturation voltage(Max) 2.1V @ 15V, 30A
Maximum Power Dissipation 188W
Total Switching Energy(Ets) 280μJ (on), 100μJ (off)
Input Type Standard
Gate Charge 70nC
Turn-on and Turn-off delay time 20ns/190ns
Testing Conditions 400V, 15A, 23 Ohm, 15V
Reverse Recovery Time (trr) 70ns
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Win Source Part Number 1045286-IKW30N65H5XKSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IKW30N65H5XKSA1 CAD Model

Description

The Infineon Technologies IKW30N65H5XKSA1 is a Trench IGBT with a reverse recovery time (trr) of 70ns.

  • Reverse Recovery Time (trr): 70ns
  • Operating Temperature Range: -40°C to 175°C (TJ)
  • Package: PG-TO247-3
  • Mounting: Through-Hole
  • Maximum Current Collector: 55A
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 650V
  • Supply and Demand: Balance
  • Total Switching Energy (Ets): 280μJ (on), 100μJ (off)
  • Turn-On Delay Time: 20ns
  • Turn-Off Delay Time: 190ns
  • Supply and Demand: Balance

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