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Same model may have multiple batches, images only for reference.
IHW50N65R5XKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IHW50N65R5XKSA1

Part No IHW50N65R5XKSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 650V 80A TO247-3 / IGBT 650 V 80 A 282 W Through Hole PG-TO247-3
Datasheet
IHW50N65R5XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr Infineon Technologies
Series TrenchStop®
Package Tube
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 80 A
Current - Collector Pulsed (Icm) 150 A
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 50A
Power - Max 282 W
Switching Energy 740µJ (on), 180µJ (off)
Input Type Standard
Gate Charge 230 nC
Td (on/off) @ 25°C 26ns/220ns
Test Condition 400V, 25A, 8Ohm, 15V
Reverse Recovery Time (trr) 95 ns
Temperature Range - Operating -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package PG-TO247-3
Base Product Number IHW50N65
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001133104,2156-IHW50N65R5XKSA1,IFEINFIHW50N65R5XKSA1
Standard Package 30
Win Source Part Number 1007492-IHW50N65R5XKSA1
Ultra Librarian 3D Model Ultra Librarian IHW50N65R5XKSA1 CAD Model

Description

The IHW50N65R5XKSA1 is a trenchstop IGBT transistor from Infineon Technologies that features a collector-emitter breakdown voltage of 650V and a maximum collector current of 80A.

  • Collector-Emitter Breakdown Voltage: 650V
  • Maximum Collector Current: 80A
  • Power Dissipation: 282W
  • Switching Energy (On): 740µJ
  • Switching Energy (Off): 180µJ
  • Reverse Recovery Time: 95ns
  • Gate Charge: 230nC
  • Operating Temperature Range: -40°C to 175°C
  • Package: TO-247-3

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