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IKW08T120 Real Image IKW08T120 Real Image
Same model may have multiple batches, images only for reference.
IKW08T120 Real Image IKW08T120 Real Image
IKW08T120 Real Image IKW08T120 Real Image
Same model may have multiple batches, images only for reference.

IKW08T120

Part No IKW08T120
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 1200V 16A 70W TO247-3
Datasheet
IKW08T120 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
IGBT Type NPT, Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 16A
Pulsed Collector Current 24A
Collector-emitter saturation voltage(Max) 2.2V @ 15V, 8A
Maximum Power Dissipation 70W
Total Switching Energy(Ets) 1.37mJ
Input Type Standard
Gate Charge 53nC
Turn-on and Turn-off delay time 40ns/450ns
Testing Conditions 600V, 8A, 81 Ohm, 15V
Reverse Recovery Time (trr) 80ns
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Win Source Part Number 088906-IKW08T120
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IKW08T120 CAD Model

Description

The IKW08T120 is an active IGBT transistor manufactured by Infineon Technologies.

  • Maximum Collector-Emitter Voltage: 1200V
  • Maximum Collector Current: 16A
  • IGBT Features: NPT, trench field stop
  • Reverse Recovery Time: 80ns
  • Gate Charge: 53nC
  • Collector-Emitter Saturation Voltage: 2.2V @ 15V, 8A
  • Mounting Type: Through Hole
  • Package: PG-TO247-3
  • Popularity: High
  • Supply and Demand Status: Limited
  • Maximum Power Dissipation: 70W
  • Total Switching Energy: 1.37mJ
  • Turn-On and Turn-Off Delay Time: 40ns and 450ns respectively

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