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IKP10N60T

Part No IKP10N60T
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 20A 110W TO220-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
IGBT Type NPT, Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 20A
Pulsed Collector Current 30A
Collector-emitter saturation voltage(Max) 2.05V @ 15V, 10A
Maximum Power Dissipation 110W
Total Switching Energy(Ets) 430μJ
Input Type Standard
Gate Charge 62nC
Turn-on and Turn-off delay time 12ns/215ns
Testing Conditions 400V, 10A, 23 Ohm, 15V
Reverse Recovery Time (trr) 115ns
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3
Win Source Part Number 205137-IKP10N60T
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IKP10N60T CAD Model

Description

The Infineon Technologies IKP10N60T is an NPT, Trench Field Stop IGBT type transistor with a maximum current collector of 20A and a VCEO maximum collector-emitter breakdown voltage of 600V.

  • Maximum Current Collector: 20A
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
  • Package: PG-TO220-3
  • Mounting Type: Through Hole
  • Reverse Recovery Time (trr): 115ns
  • Gate Charge: 62nC
  • Collector-Emitter Saturation Voltage (Max): 2.05V @ 15V, 10A
  • Total Switching Energy (Ets): 430μJ
  • Turn-On and Turn-Off Delay Time: 12ns/215ns
  • Category: Discrete Semiconductor Products
  • Popularity: Medium
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6165 $56.5775
80+ $1.3264 $106.1120
120+ $1.2849 $154.1880
165+ $1.2435 $205.1775
210+ $1.2020 $252.4200
280+ $1.0777 $301.7560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,350 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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