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Same model may have multiple batches, images only for reference.
IKN06N60RC2ATMA1 Real Image
Same model may have multiple batches, images only for reference.

IKN06N60RC2ATMA1

Part No IKN06N60RC2ATMA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description HOME APPLIANCES 14 PG-SOT223-3 / IGBT 600 V 8 A 7.2 W Surface Mount PG-SOT223-3
Datasheet
IKN06N60RC2ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr Infineon Technologies
Package Tape & Reel
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 8 A
Current - Collector Pulsed (Icm) 18 A
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 6A
Power - Max 7.2 W
Switching Energy 151µJ (on), 104µJ (off)
Input Type Standard
Gate Charge 31 nC
Td (on/off) @ 25°C 8.8ns/174ns
Test Condition 400V, 6A, 49Ohm, 15V
Reverse Recovery Time (trr) 42 ns
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case TO-261-4, TO-261AA
Supplier Device Package PG-SOT223-3
Base Product Number IKN06N
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 448-IKN06N60RC2ATMA1DKR,SP005349951,448-IKN06N60RC2ATMA1TR,448-IKN06N60RC2ATMA1CT
Standard Package 3,000
Win Source Part Number 1003981-IKN06N60RC2ATMA1
Ultra Librarian 3D Model Ultra Librarian IKN06N60RC2ATMA1 CAD Model

Description

The IKN06N60RC2ATMA1 is a single IGBT transistor from Infineon Technologies that features a collector-emitter breakdown voltage of 600V and a maximum collector current of 8A.

  • Collector-Emitter Breakdown Voltage: 600V
  • Maximum Collector Current: 8A
  • Power Dissipation: 7.2W
  • Switching Energy (on): 151µJ
  • Switching Energy (off): 104µJ
  • Reverse Recovery Time: 42ns
  • Gate Charge: 31nC
  • Operating Temperature: -40°C to 150°C
  • Package: PG-SOT223-3
  • Applications: Power supplies, motor control, and lighting

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