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Same model may have multiple batches, images only for reference.
IKD06N60RAATMA2
Same model may have multiple batches, images only for reference.

IKD06N60RAATMA2

Part No IKD06N60RAATMA2
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description DISCRETE SWITCHES / IGBT
Datasheet
IKD06N60RAATMA2 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors>IGBTs>Single IGBTs
Mfr Infineon Technologies
Series *
Package Bulk
Moisture Sensitivity Level (MSL) Vendor Undefined
REACH Status REACH Unaffected
Standard Package 398 pcs
Win Source Part Number 1382300-IKD06N60RAATMA2
Ultra Librarian 3D Model Ultra Librarian IKD06N60RAATMA2 CAD Model

Description

The Infineon Technologies IGD06N60RAATMA2 is a single IGBT transistor with a maximum power of 188W. Bold the product name (e.g., BAV99S,135 → IGD06N60RAATMA2) and manufacturer (e.g., Nexperia USA Inc. → Infineon Technologies).

  • Power: 188W (maximum)
  • Voltage Breakdown: 650V
  • Maximum Collector Current: 30A
  • Package Type: Bulk
  • Product Status: Active
  • Category: Discrete Semiconductor Products Transistors IGBTs Single IGBTs

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50+ $5.8151 $290.7550
67+ $5.2136 $349.3112
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Availability: 3,360 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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