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Same model may have multiple batches, images only for reference.
IKD04N60RFATMA1 Real Image
Same model may have multiple batches, images only for reference.

IKD04N60RFATMA1

Part No IKD04N60RFATMA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT PRODUCTS
Datasheet
IKD04N60RFATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
IGBT Type Trench
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 8A
Pulsed Collector Current 12A
Collector-emitter saturation voltage(Max) 2.5V @ 15V, 4A
Maximum Power Dissipation 75W
Total Switching Energy(Ets) 60μJ (on), 50μJ (off)
Input Type Standard
Gate Charge 27nC
Turn-on and Turn-off delay time 12ns/116ns
Testing Conditions 400V, 4A, 43 Ohm, 15V
Reverse Recovery Time (trr) 34ns
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Win Source Part Number 1045269-IKD04N60RFATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IKD04N60RFATMA1 CAD Model

Description

The Infineon Technologies IKD04N60RFATMA1 IGBT is a high-performance device that is designed for use in a wide range of electronic circuits.

  • Maximum Current Collector: 8A
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
  • Package: PG-TO252-3
  • Collector-Emitter Saturation Voltage (Max): 2.5V @ 15V, 4A
  • Maximum Power Dissipation: 75W
  • Popularity: medium
  • Status: active
  • Supply and Demand Status: balanced

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256+ $1.1737 $300.4672
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