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Same model may have multiple batches, images only for reference.
IKB20N60TATMA1 Real Image
Same model may have multiple batches, images only for reference.

IKB20N60TATMA1

Part No IKB20N60TATMA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 40A 166W TO263-3
Datasheet
IKB20N60TATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
IGBT Type Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 40A
Pulsed Collector Current 60A
Collector-emitter saturation voltage(Max) 2.05V @ 15V, 20A
Maximum Power Dissipation 166W
Total Switching Energy(Ets) 770μJ
Input Type Standard
Gate Charge 120nC
Turn-on and Turn-off delay time 18ns/199ns
Testing Conditions 400V, 20A, 12 Ohm, 15V
Reverse Recovery Time (trr) 41ns
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO-263
Win Source Part Number 119703-IKB20N60TATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IKB20N60TATMA1 CAD Model

Description

The Infineon IKB20N60TATMA1 is a trench field stop IGBT with a maximum collector-emitter breakdown voltage of 600V and a maximum current collector of 40A.

  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Current Collector: 40A
  • Maximum Power Dissipation: 166W
  • Pulsed Collector Current: 60A
  • Collector-Emitter Saturation Voltage: 2.05V @ 15V and 20A
  • Total Switching Energy: 770μJ
  • Turn-On and Turn-Off Delay Time: 18ns/199ns
  • Package: PG-TO-263

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