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Same model may have multiple batches, images only for reference.
IHW40N60RF Infineon Technologies
Same model may have multiple batches, images only for reference.

IHW40N60RF

Part No IHW40N60RF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 80A 305W TO247-3
Datasheet
IHW40N60RF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
IGBT Type Trench
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 80A
Pulsed Collector Current 120A
Collector-emitter saturation voltage(Max) 2.4V @ 15V, 40A
Maximum Power Dissipation 305W
Total Switching Energy(Ets) 560μJ (off)
Input Type Standard
Gate Charge 220nC
Turn-on and Turn-off delay time -/175ns
Testing Conditions 400V, 40A, 5.6 Ohm, 15V
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Win Source Part Number 142890-IHW40N60RF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IHW40N60RF CAD Model

Description

The Infineon Technologies 142890-IHW40N60RF is a Trench IGBT with a maximum collector-emitter breakdown voltage of 600V and a maximum collector current of 80A.

  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Collector Current: 80A
  • Gate Charge: 220nC
  • Collector-Emitter Saturation Voltage: 2.4V @ 15V and 40A
  • Total Switching Energy: 560μJ
  • Turn-On and Turn-Off Delay Times: - and 175ns respectively
  • Junction Temperature Range: -40°C to 175°C
  • Package: PG-TO247-3

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