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Same model may have multiple batches, images only for reference.
IHW20N65R5XKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IHW20N65R5XKSA1

Part No IHW20N65R5XKSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 650V 40A TO247-3
Datasheet
IHW20N65R5XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Infineon Technologies
Series TrenchStop®
Package Tube
Product Status Active
IGBT Type -
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 40 A
Current - Collector Pulsed (Icm) 60 A
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 20A
Power - Max 150 W
Switching Energy 300µJ (on), 70µJ (off)
Input Type Standard
Gate Charge 97 nC
Td (on/off) @ 25°C 24ns/250ns
Test Condition 400V, 10A, 20Ohm, 15V
Reverse Recovery Time (trr) 68 ns
Temperature Range - Operating -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package PG-TO247-3
Base Product Number IHW20N65
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1376627-IHW20N65R5XKSA1
Ultra Librarian 3D Model Ultra Librarian IHW20N65R5XKSA1 CAD Model

Description

The IHW20N65R5XKSA1 is a single IGBT transistor from Infineon Technologies.

  • Temperature Range: -40°C to 175°C
  • Maximum Collector-Emitter Voltage: 650V
  • Maximum Collector Current: 40A
  • Power Rating: 150W
  • Switching Energy (On): 300μJ
  • Switching Energy (Off): 70μJ
  • Gate Charge: 97nC

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19+ $6.2214 $118.2066
29+ $6.0269 $174.7801
40+ $5.8325 $233.3000
52+ $5.6382 $293.1864
69+ $5.0549 $348.7881
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