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LBC857AN3T5G

Part No LBC857AN3T5G
Manufacturer Leshan Radio
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Categories Uncategorized
Manufacturer Leshan Radio
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 827216-LBC857AN3T5G
Ultra Librarian 3D Model Ultra Librarian LBC857AN3T5G CAD Model

Description

The LBC857AN3T5G is a general-purpose Bipolar Junction Transistor (BJT) manufactured by Leshan Radio. It is a PNP transistor designed for amplifier and switching applications. This transistor features a collector current of -100mA and a collector-emitter voltage of -45V, making it suitable for low-power and small-signal applications. The LBC857AN3T5G provides reliable performance in a compact package.

Applications:

  • General-purpose amplification: Used in preamplifiers, audio amplifiers, and signal amplifiers.
  • Switching circuits: Employed in low-current switching applications.
  • Signal processing: Utilized in signal conditioning circuits, such as signal shaping and filtering.
  • Consumer electronics: Found in various consumer devices, including radios, televisions, and audio equipment.
  • Polarity Switching: Can be used for polarity switching circuits requiring a PNP transistor.

Features:

  • PNP Transistor: Offers complementary functionality to NPN transistors in circuit designs.
  • Low Collector-Emitter Saturation Voltage: Ensures efficient switching operation.
  • High Current Gain (hFE): Provides effective amplification capabilities.
  • Small Surface Mount Package: Facilitates compact and efficient circuit layouts.
  • Lead-Free Finish: Compliant with environmental regulations.

Benefits:

  • Versatile Application: Can be used in various amplifier and switching circuit designs.
  • Efficient Switching: Enhances switching performance due to its low saturation voltage.
  • Good Amplification: Provides effective signal amplification with its high current gain.
  • Compact Design: Enables high-density circuit designs due to the small package size.
  • Environmentally Friendly: Complies with environmental standards with its lead-free finish.

Technical Specifications:

  • Transistor Type: PNP
  • Collector-Emitter Voltage (VCEO): -45V
  • Collector Current (IC): -100mA
  • DC Current Gain (hFE): Typically between 120 and 680 (depending on the specific grade)
  • Package: SOT-323

The LBC857AN3T5G from Leshan Radio is a reliable and versatile PNP transistor suited for a wide range of electronic applications requiring amplification or switching functionalities. Its compact size and lead-free finish make it a popular choice for modern electronic designs.

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