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Same model may have multiple batches, images only for reference.
IHW20N120R2 Real Image
Same model may have multiple batches, images only for reference.

IHW20N120R2

Part No IHW20N120R2
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 1200V 40A 330W TO247-3
Datasheet
IHW20N120R2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
IGBT Type NPT, Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 40A
Pulsed Collector Current 60A
Collector-emitter saturation voltage(Max) 1.75V @ 15V, 20A
Maximum Power Dissipation 330W
Total Switching Energy(Ets) 1.2mJ (off)
Input Type Standard
Gate Charge 143nC
Turn-on and Turn-off delay time -/359ns
Testing Conditions 600V, 20A, 15 Ohm, 15V
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Win Source Part Number 1045249-IHW20N120R2
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IHW20N120R2 CAD Model

Description

The Infineon Technologies IHW20N120R2 is an NPT, Trench Field Stop IGBT transistor that operates at a maximum current collector of 40A and a maximum power dissipation of 330W.

  • Collector-Emitter Breakdown Voltage: 1200V
  • Gate Charge: 143nC
  • Maximum Collector-Emitter Saturation Voltage: 1.75V @ 15V, 20A
  • Total Switching Energy (Ets): 1.2mJ (off)
  • Package: PG-TO247-3

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