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Same model may have multiple batches, images only for reference.
IGW40N120H3 Real Image
Same model may have multiple batches, images only for reference.

IGW40N120H3

Part No IGW40N120H3
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 1200V 80A 483W TO247-3
Datasheet
IGW40N120H3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
IGBT Type Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 80A
Pulsed Collector Current 160A
Collector-emitter saturation voltage(Max) 2.4V @ 15V, 40A
Maximum Power Dissipation 483W
Total Switching Energy(Ets) 3.16mJ
Input Type Standard
Gate Charge 185nC
Turn-on and Turn-off delay time 30ns/290ns
Testing Conditions 600V, 40A, 12 Ohm, 15V
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Win Source Part Number 1045149-IGW40N120H3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IGW40N120H3 CAD Model

Description

The Infineon Technologies 1045149-IGW40N120H3 is a Trench Field Stop IGBT transistor that has a maximum collector-emitter breakdown voltage of 1200V.

  • Collector-Emitter Breakdown Voltage: 1200V
  • Maximum Current Collector: 80A
  • Maximum Power Dissipation: 483W
  • Mounting: Through Hole
  • Package: PG-TO247-3

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19+ $5.3633 $101.9027
29+ $5.1957 $150.6753
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69+ $4.3577 $300.6813
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