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Same model may have multiple batches, images only for reference.
IGW20N60H3FKSA1 Real Image
Same model may have multiple batches, images only for reference.

IGW20N60H3FKSA1

Part No IGW20N60H3FKSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 40A 170W TO247-3
Datasheet
IGW20N60H3FKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
IGBT Type Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 40A
Pulsed Collector Current 80A
Collector-emitter saturation voltage(Max) 2.4V @ 15V, 20A
Maximum Power Dissipation 170W
Total Switching Energy(Ets) 800μJ
Input Type Standard
Gate Charge 120nC
Turn-on and Turn-off delay time 17ns/194ns
Testing Conditions 400V, 20A, 14.6 Ohm, 15V
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Win Source Part Number 1045145-IGW20N60H3FKSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IGW20N60H3FKSA1 CAD Model

Description

The IGW20N60H3FKSA1 is a Trench Field Stop IGBT transistor manufactured by Infineon Technologies.

  • Package: PG-TO247-3
  • Input Type: Standard
  • Gate Charge: 120nC
  • Maximum Current Collector: 40A
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Power Dissipation: 170W
  • Pulsed Collector Current: 80A
  • Collector-Emitter Saturation Voltage(Max): 2.4V @ 15V, 20A
  • Total Switching Energy(Ets): 800μJ
  • Turn-On/Turn-Off Delay Time: 17ns/194ns
  • Testing Conditions: 400V, 20A, 14.6 Ohm, 15V
  • Suitable for: Discrete Semiconductor Products
  • Mounting: Through Hole
  • Temperature Range: -40°C to 175°C (TJ)

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