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Same model may have multiple batches, images only for reference.
IGB01N120H2ATMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IGB01N120H2ATMA1

Part No IGB01N120H2ATMA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 1200V 3.2A 28W TO263-3-2
Datasheet
IGB01N120H2ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Not For New Designs
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 3.2A
Pulsed Collector Current 3.5A
Collector-emitter saturation voltage(Max) 2.8V @ 15V, 1A
Maximum Power Dissipation 28W
Total Switching Energy(Ets) 140μJ
Input Type Standard
Gate Charge 8.6nC
Turn-on and Turn-off delay time 13ns/370ns
Testing Conditions 800V, 1A, 241 Ohm, 15V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Win Source Part Number 1045130-IGB01N120H2ATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IGB01N120H2ATMA1 CAD Model

Description

The Infineon Technologies 1045130-IGB01N120H2ATMA1 is a discrete semiconductor product with a package of PG-TO263-3-2.

  • Manufacturer: Infineon Technologies
  • Package: PG-TO263-3-2
  • IGBT Type: Not Specified
  • Input Type: Standard
  • Gate Charge: 8.6nC
  • Temperature Range: -40°C to 150°C (TJ)
  • Maximum Current Collector: 3.2A
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
  • Maximum Power Dissipation: 28W
  • Pulsed Collector Current: 3.5A
  • Collector-Emitter Saturation Voltage(Max): 2.8V @ 15V, 1A
  • Total Switching Energy(Ets): 140μJ
  • Turn-On Delay Time: 13ns
  • Turn-Off Delay Time: 370ns
  • Testing Conditions: 800V, 1A, 241 Ohm, 15V
  • Supply and Demand Status: Balanced
  • Category: Discrete Semiconductor Products
  • Lifecycle Status: Not for new designs

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