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Same model may have multiple batches, images only for reference.
IDV03S60C Real Image
Same model may have multiple batches, images only for reference.

IDV03S60C

Part No IDV03S60C
Manufacturer Infineon Technologies
Catalog Diodes, Rectifiers - Single
Description DIODE SIL CARB 600V 3A TO220-22
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes
Mfr Infineon Technologies
Series thinQ!™
Package Bulk
Product Status Active
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 3A (DC)
Voltage - Forward (Vf) (Max) @ If 1.9 V @ 3 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 30 µA @ 600 V
Capacitance @ Vr, F 90pF @ 1V, 1MHz
Mounting Type Through Hole
Package / Case TO-220-2 Full Pack
Supplier Device Package PG-TO220-2-22
Operating Temperature - Junction -55°C ~ 175°C
Standard Package 270 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Win Source Part Number 602532-IDV03S60C
Ultra Librarian 3D Model Ultra Librarian IDV03S60C CAD Model

Description

The IDV03S60C is a single silicon carbide (SiC) Schottky diode designed for rectification applications. It is part of the thinQ!™ series, known for its high performance and reliability.

  • Maximum Reverse Voltage: 600V
  • Average Rectified Current: 3A
  • Mounting Type: Through-hole
  • Forward Voltage Drop: 1.9V @ 3A
  • Recovery Time: 0ns

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