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Same model may have multiple batches, images only for reference.
FS100R07N2E4_B11
Same model may have multiple batches, images only for reference.

FS100R07N2E4_B11

Part No FS100R07N2E4_B11
Manufacturer Infineon Technologies
Catalog IGBTs - Modules
Description FS100R07 - IGBT MODULE
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - IGBT Modules
Mfr Infineon Technologies
Series EconoPACK™2
Package Bulk
Product Status Active
IGBT Type Trench Field Stop
Configuration Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 125 A
Power - Max 20 mW
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 100A
Current - Collector Cutoff (Max) 1 mA
Input Capacitance (Cies) @ Vce 6.2 nF @ 25 V
Input Standard
NTC Thermistor Yes
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package AG-ECONO2B
Standard Package 1 pcs
ECCN EAR99
HTSUS 8542.39.0001
Win Source Part Number 919301-FS100R07N2E4_B11
Ultra Librarian 3D Model Ultra Librarian FS100R07N2E4_B11 CAD Model

Description

The FS100R07N2E4_B11 is an IGBT (Insulated Gate Bipolar Transistor) module designed for three-phase inverter applications. It is part of the EconoPACK™2 series and is available in a bulk package. The manufacturer of this IGBT module is Infineon Technologies.

  • Maximum Power: 20mW
  • Collector-Emitter Breakdown Voltage (Vce): 650V
  • Maximum Collector Current (Ic): 125A
  • Mounting Type: Chassis Mount
  • Operating Temperature Range: -40°C to 150°C

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