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Same model may have multiple batches, images only for reference.
FF150R12ME3G
Same model may have multiple batches, images only for reference.

FF150R12ME3G

Part No FF150R12ME3G
Manufacturer Infineon Technologies
Catalog IGBTs - Modules
Description IGBT MODULE 1200V 200A 695W / IGBT Module Trench Field Stop Half Bridge 1200 V 200 A 695 W Chassis Mount AG-ECONOD-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Modules
Manufacturer Infineon Technologies
Packaging Bulk
IGBT Type Trench Field Stop
Configuration Half Bridge
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 200 A
Power - Max 695 W
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 150A
Current - Collector Cutoff (Max) 5 mA
Input Capacitance (Cies) @ Vce 10.5 nF @ 25 V
Input Standard
NTC Thermistor Yes
Temperature Range - Operating -40°C ~ 125°C (TJ)
Mounting Chassis Mount
Case / Package Module
Supplier Device Package AG-ECONOD-3
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 0000.00.0000
Other Part Number 2156-FF150R12ME3G,INFINFFF150R12ME3G
Standard Package 1
Win Source Part Number 1324962-FF150R12ME3G
Ultra Librarian 3D Model Ultra Librarian FF150R12ME3G CAD Model

Description

The Infineon Technologies FF150R12ME3G is a Half Bridge IGBT Module with a power rating of 695 W.

  • Mounting Type: Chassis Mounted
  • Package: Bulk
  • Voltage Rating: 1200 V
  • Current Rating: 200 A
  • IGBT Type: Trench Field Stop
  • Input Capacitance: 10.5 nF
  • NTC Thermistor: Yes
  • Temperature Range: -40°C to 125°C (TJ)
  • ROHS3 Compliant: Yes
  • Category: Discrete Semiconductor Products>Transistors - IGBTs - Modules

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2+ $116.3488 $232.6976
3+ $104.3127 $312.9381
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