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Same model may have multiple batches, images only for reference.
CYDD09S36V18-167BBXI Real Image
Same model may have multiple batches, images only for reference.

CYDD09S36V18-167BBXI

Part No CYDD09S36V18-167BBXI
Manufacturer Infineon Technologies
Catalog Memory
Description IC SRAM 9MBIT PAR 167MHZ 256FBGA / SRAM - Dual Port, Synchronous Memory IC 9Mbit Parallel 167 MHz 600 ps 256-FBGA (17x17)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs) - Memory - Memory
Mfr Infineon Technologies
Package Tray
Product Status Obsolete
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Dual Port, Synchronous
Memory Size 9Mbit
Memory Organization 128K x 36 x 2 (DDR)
Memory Interface Parallel
Clock Frequency 167 MHz
Access Time 600 ps
Voltage - Supply 1.42V ~ 1.58V, 1.7V ~ 1.9V
Temperature Range - Operating -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 256-LBGA
Supplier Device Package 256-FBGA (17x17)
Base Product Number CYDD
Standard Package 84
MSL Level 5 (48 Hours)
REACH Status REACH Unaffected
ECCN 3A991B2A
HTSUS 8542.32.0041
Win Source Part Number 1347909-CYDD09S36V18-167BBXI
Ultra Librarian 3D Model Ultra Librarian CYDD09S36V18-167BBXI CAD Model

Description

The Infineon Technologies CYDD09S36V18-167BBXI is a Dual Port, Synchronous SRAM Memory with a memory size of 9Mbit.

  • Memory Organization: 128K x 36 x 2 (DDR)
  • Memory applications: Integrated Circuits (ICs) - Memory - Memory
  • Memory Type: Volatile
  • Access Time: 600 ps
  • Voltage Supply: 1.42V to 1.58V and 1.7V to 1.9V
  • Clock Frequency: 167 MHz
  • Memory Interface: Parallel
  • Mounted on: 256-LBGA package
  • Product Status: Obsolete
  • ECCN: 3A991B2A
  • REACH: Unaffected
  • HTSUS: 8542.32.0041
  • MSL level: 5 for 48 hours

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