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CY7S1061GE30-10BVXI

Part No CY7S1061GE30-10BVXI
Manufacturer Infineon Technologies
Catalog Memory
Description IC SRAM 16MBIT PARALLEL 48VFBGA / SRAM - Synchronous, SDR Memory IC 16Mbit Parallel 10 ns 48-VFBGA (6x8)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Integrated Circuits (ICs) - Memory - Memory
Mfr Infineon Technologies
Package Tray
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Synchronous, SDR
Memory Size 16Mbit
Memory Organization 1M x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 10ns
Access Time 10 ns
Voltage - Supply 2.2V ~ 3.6V
Temperature Range - Operating -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 48-VFBGA
Supplier Device Package 48-VFBGA (6x8)
Base Product Number CY7S1061
Standard Package 4,800
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B2A
HTSUS 8542.32.0041
Win Source Part Number 1347971-CY7S1061GE30-10BVXI
Ultra Librarian 3D Model Ultra Librarian CY7S1061GE30-10BVXI CAD Model

Description

The CY7S1061GE30-10BVXI is a synchronous SRAM memory device with a memory size of 16Mbit. It is a surface mount device with a 48-VFBGA package. The package is a tray with a standard package of 4,800. The CY7S1061GE30-10BVXI has an access time of 10 ns and a voltage supply range of 2.2V to 3.6V. The device has a write cycle time of 10ns and a memory interface of parallel. It is unaffected by REACH and has an ECCN of 3A991B2A. The CY7S1061GE30-10BVXI is a volatile memory type with an SRAM memory format.

  • Memory Type: Synchronous SRAM
  • Memory Size: 16Mbit
  • Mounting Type: Surface Mount
  • Package: 48-VFBGA
  • Packaging: Tray
  • Standard Package: 4,800
  • Access Time: 10 ns
  • Voltage Supply: 2.2V to 3.6V
  • Write Cycle Time: 10ns
  • Memory Interface: Parallel
  • REACH Affected: No
  • ECCN: 3A991B2A
  • Volatile/Non-Volatile: Volatile
  • Memory Format: SRAM

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