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Same model may have multiple batches, images only for reference.
CY7S1061G18-15ZSXIT Real Image
Same model may have multiple batches, images only for reference.

CY7S1061G18-15ZSXIT

Part No CY7S1061G18-15ZSXIT
Manufacturer Infineon Technologies
Catalog Memory
Description IC SRAM 16MBIT PAR 54TSOP II / SRAM - Synchronous, SDR Memory IC 16Mbit Parallel 15 ns 54-TSOP II
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs) - Memory - Memory
Mfr Infineon Technologies
Package Tape & Reel
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Synchronous, SDR
Memory Size 16Mbit
Memory Organization 1M x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 15ns
Access Time 15 ns
Voltage - Supply 1.65V ~ 2.2V
Temperature Range - Operating -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package 54-TSOP II
Base Product Number CY7S1061
Standard Package 1,000
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B2A
HTSUS 8542.32.0041
Win Source Part Number 1347922-CY7S1061G18-15ZSXIT
Ultra Librarian 3D Model Ultra Librarian CY7S1061G18-15ZSXIT CAD Model

Description

The CY7S1061G18-15ZSXIT is a synchronous SRAM memory from Infineon Technologies with a memory size of 16Mbit and a write cycle time of 15ns.

  • Memory Size: 16Mbit
  • Write Cycle Time: 15ns
  • Memory Type: Volatile
  • Access Time: 15ns
  • Temperature Range: -40°C ~ 85°C (TA)
  • Voltage Supply Range: 1.65V to 2.2V
  • Package: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
  • Memory Interface: Parallel
  • REACH: Unaffected
  • ECCN: 3A991B2A

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