The BSO083N03MS is a 30V, N-Channel MOSFET from Infineon Technologies, optimized for high-efficiency power switching applications.

Applications

• Synchronous rectification in SMPS (Switched-Mode Power Supplies)
• DC-DC converters
• Load switching and power management
• Battery management systems

Features

• Extremely low on-resistance RDS(on) for minimal conduction losses
• Logic level gate drive for direct microcontroller interfacing
• Avalanche rated for enhanced robustness
• Halogen-free and RoHS compliant
• ThinPG-TSDSON-8 package for optimized thermal performance and space saving

Benefits

• Increased power efficiency due to reduced RDS(on), leading to lower heat dissipation and energy savings.
• Simplified gate drive circuitry, reducing system cost and complexity.
• Improved system reliability and robustness under inductive load conditions.
• Environmentally friendly due to compliance with environmental regulations.
• Compact design and improved thermal performance due to the thin package.

Technical Specifications

The BSO083N03MS features a drain-source voltage (VDS) of 30V and a continuous drain current (ID) of up to 27A, depending on operating conditions and board layout. The typical on-resistance (RDS(on)) is exceptionally low, usually in the range of a few milliohms at a VGS of 10V. The device is housed in a space-saving PG-TSDSON-8 package. The gate threshold voltage (VGS(th)) is designed for logic-level compatibility, typically between 1V and 2V. It provides fast switching performance, important for high-frequency power conversion. The operating temperature range is -55°C to +150°C.