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Same model may have multiple batches, images only for reference.
BSL207NL6327 Real Image
Same model may have multiple batches, images only for reference.

BSL207NL6327

Part No BSL207NL6327
Manufacturer Infineon Technologies
Catalog FETs - Arrays
Description SMALL SIGNAL N-CHANNEL MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Infineon Technologies
Series OptiMOS™
Package Bulk
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2.1A
Rds On (Max) @ Id, Vgs 70mOhm @ 2.1A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs 2.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 419pF @ 10V
Power - Max 500mW
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package PG-TSOP6-6
Base Product Number BSL207
Standard Package 1,124 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 846629-BSL207NL6327
Ultra Librarian 3D Model Ultra Librarian BSL207NL6327 CAD Model

Description

The BSL207NL6327 is a dual N-Channel MOSFET array designed for various applications. Bold the product name (e.g., BAV99S,135 → BSL207NL6327) and manufacturer (e.g., Nexperia USA Inc. → Infineon Technologies).

  • Channel Type: Dual N-Channel
  • Drain to Source Voltage: 20V
  • Continuous Drain Current: 2.1A
  • On-Resistance: 70mOhm @ 2.1A, 4.5V
  • Mounting Type: Surface Mount
  • Package: SOT-23-6 Thin, TSOT-23-6
  • Gate Charge: 2.1nC @ 4.5V
  • Operating Temperature: -55°C to 150°C
  • Status: Active

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