The AUIRGR4045DTRL is a discrete Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies. This IGBT is designed for high-speed switching applications and offers excellent performance in terms of efficiency and reliability. It’s optimized for use in a variety of power conversion systems.

Applications

• Uninterruptible Power Supplies (UPS)
• Welding equipment
• Induction heating
• Motor drives
• Power factor correction (PFC) circuits

Features

• Optimized for high-speed switching
• Low VCE(on) to reduce conduction losses
• Fast switching speed
• Short circuit ruggedness
• Trench Fieldstop technology for enhanced performance

Benefits

• Improved system efficiency
• Reduced power dissipation
• Enhanced system reliability due to robust design
• Simplified thermal management
• Cost-effective solution for power conversion

Technical Specifications

The AUIRGR4045DTRL features a collector-emitter voltage (VCE) of 650V and a continuous collector current (IC) of 40A at 25°C. The pulsed collector current can reach up to 120A. The gate-emitter voltage (VGE) is typically ±20V. The IGBT has a low VCE(on) of typically 1.6V at IC = 40A. The gate charge (Qg) is typically 50nC. The turn-on and turn-off times are optimized for high-speed switching. The device is designed for through-hole mounting with a standard TO-247 package. The operating junction temperature ranges from -55°C to +175°C. It also provides short circuit protection capability. The input capacitance is carefully controlled to minimize switching losses. The thermal resistance from junction to case is typically low, facilitating efficient heat dissipation.