The 2SD1410 is an NPN silicon epitaxial transistor manufactured by Inchange Semiconductor Company Limited. It is designed for high current switching and amplifier applications.

Applications

• Switching Regulators
• DC-DC converters
• Motor drivers
• High-current amplifiers

Features

• High collector current: IC = 5A
• Low saturation voltage
• High power dissipation
• Fast switching speed

Benefits

• Efficient power conversion: Low saturation voltage minimizes power loss.
• High current handling capability: Suitable for driving high-current loads.
• Reliable performance: Robust design for demanding applications.
• Fast switching: Suitable for high-frequency applications.

Technical Specifications

The 2SD1410 has a collector-emitter voltage (VCEO) rating of 80V and a collector current (IC) rating of 5A. The collector power dissipation (PC) is 30W. The DC current gain (hFE) typically ranges from 80 to 300. The saturation voltage (VCE(sat)) is typically 0.5V at IC = 3A. It is available in a TO-220 package. The transition frequency (fT) is typically 8MHz. The base-emitter voltage is 1.2V at IC=3A. The storage temperature range extends from -55°C to +150°C. Its low saturation voltage ensures efficient switching, minimizing power dissipation in various applications. The high collector current capability enables it to drive demanding loads effectively. The fast switching speed makes it suitable for applications requiring rapid switching actions. The robust TO-220 package provides excellent thermal dissipation. This transistor is well-suited for a wide range of power switching and amplifier applications where high current handling and efficient operation are critical.