The IDT70V658S15DR is a high-speed synchronous SRAM organized as 64K x 36 or 128K x 18. It is designed for applications requiring high bandwidth and low latency memory access. Key features include synchronous operation, fast access times, and on-chip registers for simplified memory control.

Applications

• Networking
• Telecommunications
• Data Communications
• High-Performance Computing
• Cache Memory

Features

• High-speed access time: 15ns
• Internal synchronous self-timed write
• Single 3.3V power supply
• LVTTL Compatible Inputs and Outputs
• Byte Write Enable

Benefits

• High bandwidth for improved system performance
• Simplified memory control with internal self-timed write
• Lower power consumption for energy-efficient systems
• Easy interfacing with standard logic levels
• Flexible write operation for efficient data handling

Technical Specifications

The IDT70V658S15DR operates at 3.3V. The access time is 15ns. The device offers LVTTL-compatible inputs and outputs. It supports byte write enable for selective memory updates.