The IDT6116SA35TDB is a high-speed CMOS static RAM (SRAM) organized as 2K x 8 bits. It is designed for applications requiring fast access times and low power consumption. The device is commonly used in cache memory and buffer memory applications.

Applications

• Cache Memory
• Buffer Memory
• High-Speed Data Acquisition Systems
• Digital Signal Processing
• Embedded Systems

Features

• High-speed access time: 35ns
• Low power consumption
• Single 5V power supply
• Fully static operation: no clock or refresh required
• TTL-compatible inputs and outputs
• 2K x 8 organization

Benefits

• Improved system performance due to fast access times
• Reduced power consumption, leading to longer battery life in portable devices
• Simplified system design due to fully static operation
• Easy interfacing with TTL logic circuits

Technical Specifications

The IDT6116SA35TDB operates from a single 5V power supply. The access time is 35ns. It features TTL-compatible inputs and outputs. It's fully static, requiring no clock or refresh signals. The device is available in different package options. The operating temperature range is typically commercial (0°C to +70°C).