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HY51V18164CJC-60DR

Part No HY51V18164CJC-60DR
Manufacturer Hynix Semiconductor
Catalog OEM Souring
Description EDO 1Mx16 3.3v SOJ
Sample
Rohs State Need to verify
ECAD Module
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Category OEM Souring
Win Source Part Number 1465322-HY51V18164CJC-60DR
Manufacturer Hynix Semiconductor
Ultra Librarian 3D Model Ultra Librarian HY51V18164CJC-60DR CAD Model

Description

The HY51V18164CJC-60DR is a high-performance EDO (Extended Data Output) DRAM memory component manufactured by Hyundai, now known as SK hynix. It features a 1Mx16 configuration, indicating it can store up to 16 million bits of data, organized as 1 million words of 16 bits each. Operating at a voltage of 3.3V, this component is designed for energy efficiency while maintaining speedy data throughput, fitting for the time of its production. Its package type is SOJ (Small Outline J-leaded), which is known for its compact footprint and ease of soldering onto printed circuit boards. The HY51V18164CJC-60DR is designed to meet the needs of high-speed computing and digital communication applications, including desktop computers, servers, and workstations from that era. Its EDO technology makes it faster than traditional DRAMs by allowing a new read operation to start while data from the previous read is still being sent, enhancing overall system performance.

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Shipping Information

Shipped from HK warehouse
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