The HY5116400CT-60 is a high-speed 16Mb Dynamic Random Access Memory (DRAM) chip manufactured by Hynix Semiconductor. It is organized as 4M x 4 bits and designed for applications requiring fast access times and moderate memory density. This DRAM is suitable for use in graphics cards, embedded systems, and other high-performance applications.

Applications

• Graphics cards for frame buffer memory.
• Embedded systems requiring high-speed memory.
• Printers for temporary data storage.
• Networking equipment for packet buffering.
• Video processing systems.

Features

• Organization: 4M x 4 bits
• Access Time: 60 ns
• Supply Voltage: 5V
• Package: SOJ or TSOP
• Operating Temperature: 0°C to +70°C
• Fast Page Mode: Improves read/write performance.
• TTL Compatible Inputs and Outputs: Simplifies interfacing with other logic devices.

Benefits

• Fast access times enable quick data retrieval and manipulation.
• High bandwidth supports demanding applications.
• Low power consumption reduces system power requirements.
• Compact package saves board space.
• TTL compatibility simplifies system integration.

Additional Details

The HY5116400CT-60 utilizes advanced DRAM technology to achieve high speed and low power consumption. It supports fast page mode operation, which significantly improves read/write performance for sequential data access. The device is available in industry-standard packages, such as SOJ and TSOP, for easy integration into various systems.

The 60ns access time makes it well-suited for applications where fast memory access is critical. The device is designed to operate reliably over a temperature range of 0°C to +70°C. This DRAM provides a balance of speed, density and is ideal for various memory applications.