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HMT112U7BFR8C-H9T0

Part No HMT112U7BFR8C-H9T0
Manufacturer Hynix Semiconductor
Catalog Memory - Modules
Description DDR3-1333 128Mx72 ECC UDIMM 1Rx8 (1GB)
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ECAD Module
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Categories Memory - Modules
Win Source Part Number 949158-HMT112U7BFR8C-H9T0
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Ultra Librarian 3D Model Ultra Librarian HMT112U7BFR8C-H9T0 CAD Model

Description

The HMT112U7BFR8C-H9T0 is a DDR3 registered DIMM (RDIMM) from Hynix Semiconductor, designed for use in servers and high-performance workstations. This memory module offers a balance of speed, capacity, and reliability, making it suitable for demanding applications such as virtualization, data analysis, and scientific computing.

Applications:

  • Servers: Ideal for use in rackmount and blade servers requiring high memory capacity and stability.
  • Workstations: Suitable for professional workstations used for video editing, 3D rendering, and CAD/CAM applications.
  • Data Centers: Can be deployed in data centers to support virtual machines and cloud computing environments.
  • High-Performance Computing: Used in HPC clusters for scientific simulations and research.

Features:

  • Capacity: 1GB DDR3 RDIMM
  • Speed: Operates at a frequency of 1333MHz, providing fast data transfer rates.
  • Error Correction: Equipped with ECC (Error-Correcting Code) functionality, ensuring data integrity and system stability.
  • Registered: Registered design enhances signal integrity and allows for higher memory module capacities.
  • Voltage: Operates at a standard voltage of 1.5V, contributing to energy efficiency.
  • Pin Count: 240-Pin DDR3 DIMM

Benefits:

  • Increased System Performance: The high operating frequency and capacity of the module contribute to faster application loading times and improved overall system responsiveness.
  • Enhanced Data Integrity: ECC functionality protects against data corruption, reducing the risk of system errors and crashes.
  • Improved System Stability: The registered design ensures reliable operation, even under heavy workloads.
  • Energy Efficiency: The low operating voltage helps to reduce power consumption and cooling costs.
  • Scalability: Allows for increased memory capacity, enabling systems to handle more demanding applications and larger datasets.

Additional Details:

The HMT112U7BFR8C-H9T0 module is built using high-quality components and undergoes rigorous testing to ensure reliability and compatibility. It complies with JEDEC standards for DDR3 memory modules. The module is designed for easy installation and configuration in compatible systems.

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