The H5TQ4G83CFR-PBC is a high-performance DDR3 SDRAM (Synchronous Dynamic Random-Access Memory) chip manufactured by Hynix Semiconductor. This component is engineered for applications demanding high bandwidth and low latency data access.

Applications

• Desktop PCs
• Laptop Computers
• Servers
• Workstations
• High-performance graphics cards
• Gaming Consoles
• Networking Devices (Routers, Switches)

Features

• 4Gb (512M x 8) memory configuration
• DDR3 interface supporting data transfer rates up to 1600 Mbps
• 8 Internal Banks for concurrent operations
• Double Data Rate Architecture (two data transfers per clock cycle)
• 8-bit Prefetch Architecture
• On-Die Termination (ODT)
• Auto Refresh and Self-Refresh modes for power saving
• RoHS compliant
• Operating temperature range: 0°C to 95°C

Benefits

• High Bandwidth leading to improved system performance
• Low Power Consumption for energy efficiency
• Increased Memory Capacity suitable for large datasets and complex applications
• Reduced Latency providing faster response times
• Enhanced System Stability and Reliability

Technical Specifications

The H5TQ4G83CFR-PBC operates on a 1.5V power supply. It is packaged in a standard FBGA (Fine-pitch Ball Grid Array) package, suitable for surface mount technology. This memory chip supports various JEDEC standard timings and configurations ensuring compatibility with a variety of memory controllers. Supports burst lengths of 4 and 8. It offers improved power efficiency as compared to earlier DDR2 memory technology. The integrated on-die termination minimizes signal reflections and improves signal integrity even at high data transfer rates. The device is built using lead-free manufacturing processes in compliance with environmental regulations. The H5TQ4G83CFR-PBC is designed to satisfy the needs of today's computing and networking applications providing a robust and effective memory solution.