The H5TQ2G63BFR-H9I is a 2Gb DDR3 SDRAM (Synchronous Dynamic Random-Access Memory) chip manufactured by Hynix Semiconductor. This component is designed for use in applications that require both high memory capacity and high-speed data transfer rates. The organization is 128M x 16.

Applications

• Desktop PCs
• Laptop Computers
• Graphics Cards
• Gaming Consoles
• Networking Devices

Features

• Capacity: 2Gb (128M x 16)
• Interface: DDR3 SDRAM
• Operating Voltage: 1.5V (Typical)
• Speed Grade: H9I (Determines the maximum clock frequency and data transfer rate)
• Data Rate: Supports data transfer rates up to DDR3-1600, depending on the specific H9I speed bin.
• Clock Frequency: Operates at a clock frequency as defined by the speed grade.
• Package: FBGA (Fine-Pitch Ball Grid Array)
• RoHS Compliance: Lead-free and compliant with RoHS standards.
• Power Saving Features: Includes features to reduce power consumption during idle states.
• Double Data Rate: Transfers data on both the rising and falling edges of the clock signal.

Benefits

• High Capacity: 2Gb capacity offers ample memory space for demanding applications.
• High Bandwidth: DDR3 technology provides significantly higher bandwidth compared to older DDR standards.
• Low Power Consumption: 1.5V operation reduces power consumption.
• Improved Performance: Enhanced data transfer rates improve system performance.
• Cost-Effective: DDR3 offers a good balance between performance and cost.
• Wide Availability: DDR3 memory is widely available and supported.
• Reliable Operation: Designed for stable and reliable performance.

Additional Details

The H9I speed grade is critical to the performance of this chip. Consult the Hynix datasheet for precise timing characteristics and other relevant specifications related to the H9I speed bin. The FBGA package provides a compact footprint and efficient thermal dissipation. DDR3 SDRAM makes use of a prefetch architecture to enhance data throughput. This is typically used in memory modules to expand system memory.