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H5TQ2G43BFR-G7C

Part No H5TQ2G43BFR-G7C
Manufacturer Hynix Semiconductor
Catalog DDR
Description DDR3-1066 512Mx4 (2Gb)
Sample
Rohs State rohs
ECAD Module
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Categories Memory
Win Source Part Number 941118-H5TQ2G43BFR-G7C
Series *
Ultra Librarian 3D Model Ultra Librarian H5TQ2G43BFR-G7C CAD Model

Description

The H5TQ2G43BFR-G7C is a DDR3 SDRAM (Synchronous Dynamic Random-Access Memory) chip manufactured by Hynix Semiconductor. It's designed for high-performance memory applications requiring substantial bandwidth and efficient power management.

Applications:

  • Desktop PCs
  • Laptop computers
  • Gaming consoles
  • High-performance computing
  • Networking equipment (routers, switches)

Features:

  • DDR3 Technology: Utilizes the DDR3 architecture, providing improved speed and efficiency compared to previous DDR generations.
  • 2Gb Density: Features a memory density of 2 Gigabits (256MB).
  • Operating Speed: Supports data transfer rates up to 1600 MT/s (Mega Transfers per second), depending on system configuration.
  • Low Voltage: Operates at a standard 1.5V, reducing power consumption and heat generation.
  • FBGA Package: Uses a Fine-pitch Ball Grid Array (FBGA) package for efficient surface mounting and thermal dissipation.
  • RoHS Compliance: Compliant with the RoHS (Restriction of Hazardous Substances) directive.

Benefits:

  • Increased Bandwidth: Offers high bandwidth for demanding applications, resulting in improved system responsiveness and performance.
  • Reduced Power Consumption: Low voltage operation minimizes power consumption, extending battery life in portable devices and reducing energy costs.
  • Enhanced Performance: Improves overall system performance by enabling faster memory access and data transfer.
  • Reliable Operation: Manufactured by Hynix, a leading memory manufacturer, ensuring high reliability and quality.
  • Cost-Effective Solution: Provides a balance of performance and cost, making it suitable for a wide range of applications.

Additional Details:

The H5TQ2G43BFR-G7C is internally organized into banks, allowing for concurrent memory access and improved efficiency. It incorporates features like auto refresh, self refresh, and power-down modes to optimize power management. For detailed specifications, including timing parameters and operating temperature ranges, refer to the Hynix Semiconductor datasheet for this specific part number. Its design ensures stable operation even under demanding workloads, making it a reliable choice for various memory-intensive tasks.

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