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H5TQ1G83TFR-G7C

Part No H5TQ1G83TFR-G7C
Manufacturer Hynix Semiconductor
Catalog DDR
Description DDR3-1066 128Mx8 FGBA (1Gb)
Sample
Rohs State rohs
ECAD Module
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Categories Memory
Win Source Part Number 941541-H5TQ1G83TFR-G7C
Series *
Ultra Librarian 3D Model Ultra Librarian H5TQ1G83TFR-G7C CAD Model

Description

The H5TQ1G83TFR-G7C is a 1Gb DDR3 SDRAM component from Hynix Semiconductor. It's designed for applications requiring high memory bandwidth and low power consumption, such as embedded systems, networking devices, and consumer electronics.

Applications:

  • Embedded Systems
  • Networking Devices
  • Consumer Electronics
  • Set-Top Boxes
  • Industrial Control Systems

Features:

  • 1Gb (128M x 8) memory organization
  • DDR3 interface for high-speed data transfer
  • Data rates up to 1333 Mbps
  • Low power consumption (1.5V supply voltage)
  • 8 internal banks for concurrent operations
  • Double data rate architecture (two data transfers per clock cycle)
  • Differential clock inputs (CK, /CK)
  • 8n-bit prefetch architecture for efficient data retrieval

Benefits:

  • High memory bandwidth enhances overall system performance.
  • Low power consumption extends battery life in portable devices and reduces energy costs in other applications.
  • Small form factor allows for compact system designs.
  • Improved reliability and stability due to advanced manufacturing processes.
  • Cost-effective solution for DDR3 memory requirements.

Technical Specifications:

The H5TQ1G83TFR-G7C operates at a 1.5V supply voltage and supports data rates up to 1333 Mbps. It uses an 8n-bit prefetch architecture to maximize data throughput. The component is Pb-free and RoHS compliant, ensuring environmental responsibility. Detailed timing specifications, electrical characteristics, and package information are available in the Hynix datasheet. It is commonly packaged in a FBGA (Fine-Pitch Ball Grid Array) package for reliable surface mounting. This DDR3 SDRAM is designed for reliability and stability, making it suitable for a wide range of applications.

It incorporates features such as write leveling and on-die termination (ODT) to improve signal integrity and reduce reflections. These features ensure stable and reliable operation at high data rates. The H5TQ1G83TFR-G7C is a versatile and efficient memory solution for modern embedded and consumer electronics systems.

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