The H5TC4G63EFR-RDI is a high-performance 4Gb DDR3 SDRAM component manufactured by Hynix Semiconductor. It's designed for a wide range of applications, including PCs, laptops, servers, and embedded systems, where high bandwidth and low power consumption are crucial.

Applications:

• Desktop PCs
• Laptop Computers
• Servers
• Networking Equipment
• Graphics Cards

Features:

• 4Gb (512M x 8) memory configuration
• DDR3 interface for high-speed data transfer
• Data rates up to 1600 Mbps
• Low power consumption
• 8 Internal Banks
• Double data rate architecture: two data transfers per clock cycle
• Differential clock inputs (CK, /CK)
• 8n-bit prefetch architecture

Benefits:

• Increased system performance due to high bandwidth data transfer.
• Reduced power consumption contributes to longer battery life in mobile devices and lower energy costs in servers.
• High density allows for larger memory capacity in smaller form factors.
• Improved reliability and stability due to advanced manufacturing processes.
• Cost-effective solution for high-performance memory requirements.

Technical Specifications:

The H5TC4G63EFR-RDI operates at a supply voltage of 1.5V. It supports a wide range of operating temperatures. The component utilizes an 8n-bit prefetch architecture to enable high-speed data transfer. It is Pb-free and RoHS compliant. This DDR3 SDRAM is designed to meet the demanding requirements of modern computing and embedded systems, providing a balance of performance, power efficiency, and reliability. Detailed timing parameters and electrical characteristics can be found in the official Hynix datasheet. The FBGA package ensures reliable mounting on printed circuit boards.

It incorporates advanced features such as write leveling and ZQ calibration to improve signal integrity and stability. The component is rigorously tested to ensure high quality and long-term reliability. The H5TC4G63EFR-RDI is an essential component for systems requiring high-speed, low-power memory solutions.