The H5ANAG4NAJR-XNC is a 4Gb DDR4 SDRAM component manufactured by Hynix Semiconductor. Designed for high-performance applications, it delivers increased bandwidth and reduced power consumption compared to previous DDR generations.

Applications:

• Desktop computers
• Laptop computers
• Servers
• Networking equipment
• Embedded systems

Features:

• 4Gb (512M x 8) memory organization
• DDR4 interface with data rates up to 2400 MT/s or higher.
• Operating voltage of 1.2V
• On-die termination (ODT) for improved signal integrity
• Lead-free and RoHS compliant

Benefits:

• Increased system performance due to high data transfer rates.
• Lower power consumption compared to DDR3, leading to improved energy efficiency.
• Improved signal integrity due to ODT, resulting in more reliable operation.
• Environmentally friendly due to lead-free and RoHS compliance.

Additional Details:

The H5ANAG4NAJR-XNC DDR4 SDRAM provides a significant upgrade in performance and efficiency. Its 4Gb density suits many application needs. The DDR4 interface facilitates faster data transfers. The 1.2V operating voltage makes it ideal for mobile and power-sensitive applications. The inclusion of on-die termination reduces signal reflections and crosstalk, creating a more stable system. Further datasheet analysis is recommended to ascertain parameters like CAS Latency (CL), tRCD, and tRP. The XNC suffix identifies the precise timing and speed grade within the DDR4 specification. This part is commonly packaged in FBGA.

The key function of the H5ANAG4NAJR-XNC is to offer high-speed and dependable memory access. The low operating voltage curtails power dissipation, contributing to efficient system operation. Signal integrity is bolstered by on-die termination, enhancing system dependability. The component adheres to lead-free and RoHS standards, aligning with environmental regulations. Ultimately, the 4Gb capacity caters to applications requiring substantial memory resources.