The Hynix Semiconductor 657659 is a 4GB memory module configured as 256Mx8 with an 18C timing specification. The additional number '3' at the end likely indicates a revision or sub-specification. This module provides temporary data storage and is used in a variety of applications, ranging from desktop computers to embedded systems.
Applications:
- Desktop Computers: Enhances system performance by providing system memory.
- Laptop Computers: Supports portable computing devices.
- Workstations: Provides adequate memory for running complex applications.
- Gaming PCs: Improves gaming performance.
- Servers: Used as a fundamental memory component in server systems.
Features:
- 4GB Capacity: Offers a significant amount of memory for multitasking.
- 256Mx8 Configuration: Organizes the memory into 256 million words, each 8 bits wide.
- 18C Timing: Specifies the CAS Latency (Column Address Strobe latency) rating.
- Standard Module Format: Adheres to a standard module form factor for easy installation and compatibility.
- High-Speed Data Transfer: Enables fast and efficient data access.
Benefits:
- Improved System Performance: Increases system speed and responsiveness.
- Enhanced Multitasking: Allows multiple applications to run concurrently.
- Increased Productivity: Improves efficiency in memory intensive tasks.
- Smooth Gaming Experience: Reduces lag in games.
- Cost-Effective Upgrade: Offers a good balance of performance and affordability.
Additional Details:
This Hynix memory module is likely DDR3 SDRAM, although DDR2 or DDR4 are possible depending on manufacturing date. The 256Mx8 configuration describes the arrangement of memory cells within the module. A CAS Latency of 18C, refers to the delay between the memory controller requesting data and its availability. Always consult the datasheet prior to installation to check the voltage requirements, frequency, and precise timing parameters. Proper handling to avoid ESD damage is crucial during installation. The presence of the trailing '3' in the part number likely denotes a specific revision or sub-specification of the memory module, potentially related to manufacturing process or internal components.