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HMC213MS8ETR

Part No HMC213MS8ETR
Manufacturer Hittite
Catalog Hard To Find
Sample
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Reference Date Code 10+
Reference case MSOP8
Manufacturer Hittite
Manufacturer Homepage www.hittite.com
Win Source Part Number 710313-HMC213MS8ETR
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HMC213MS8ETR CAD Model

Description

The Hittite HMC213MS8ETR is a GaAs MMIC SPDT (Single Pole Double Throw) switch designed for use in a variety of RF and microwave applications operating from DC to 3.5 GHz. This switch offers low insertion loss, high isolation, and excellent linearity, making it suitable for both transmit and receive applications. It is controlled by a single positive voltage and requires minimal external components.

Applications:

  • Wireless communications: Used in cellular base stations and mobile devices for antenna switching.
  • Test and measurement equipment: Employed in signal routing and switching within test instruments.
  • Satellite communications: Integrated into satellite transceivers for signal selection.
  • Radar systems: Used in radar front-ends for switching between different signal paths.
  • ISM band applications: Suitable for use in industrial, scientific, and medical (ISM) band equipment.

Features:

  • Frequency Range: Operates from DC to 3.5 GHz.
  • Low Insertion Loss: Typically 0.5 dB at 2 GHz.
  • High Isolation: Typically 30 dB at 2 GHz.
  • High IP3: +53 dBm typical third-order intercept point.
  • Single Positive Supply: Requires a single positive control voltage.
  • Fast Switching Speed: Typical switching speed of 4 ns.
  • MSOP8 Package: Small form factor MSOP8 surface mount package.

Benefits:

  • Improved System Performance: Low insertion loss and high isolation contribute to enhanced signal integrity.
  • Simplified Design: Single positive supply simplifies circuit design and reduces component count.
  • Compact Size: Small MSOP8 package allows for dense board layouts.
  • Versatile Application: Wide frequency range makes it suitable for various RF and microwave systems.
  • Robust Performance: High IP3 ensures minimal signal distortion in high-power applications.

Additional Details:

The HMC213MS8ETR is fabricated using a GaAs process, which provides excellent high-frequency performance. The switch is controlled by applying a positive voltage to the control pin. The specific voltage levels required are detailed in the datasheet. This device is designed to be impedance matched to 50 ohms, simplifying integration into standard RF systems. It is crucial to follow the recommended PCB layout guidelines to minimize signal losses and ensure optimal performance. The part is available in tape and reel for automated assembly.

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $5.0870 $50.8700
24+ $4.1739 $100.1736
38+ $4.0435 $153.6530
52+ $3.9130 $203.4760
67+ $3.7826 $253.4342
89+ $3.3913 $301.8257
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,590 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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