The HM62256ALFPI12T is a high-performance, low-power CMOS static RAM (SRAM) manufactured by Hitachi. It is organized as 32,768 words by 8 bits (32KB) and offers a fast access time of 12ns, making it suitable for various memory applications where speed and low power consumption are crucial.

Applications

• Embedded systems
• Cache memory
• Buffer memory
• Data logging devices
• Portable electronic devices

Features

• High-speed access time: 12ns
• Low power consumption: active and standby modes
• Single 5V power supply
• TTL-compatible inputs and outputs
• Three-state outputs
• Data retention voltage: 2V (min)
• Package: DIP32

Benefits

• Improved system performance due to fast access time
• Reduced power consumption, extending battery life in portable applications
• Simplified system design due to single power supply requirement
• Easy integration with TTL-based systems
• Easy memory expansion and bus sharing
• Reliable data storage even at low voltages

Additional Details

The HM62256ALFPI12T is designed with advanced CMOS technology, ensuring high performance and low power dissipation. Its fast access time enhances the overall speed of the system, while its low power consumption makes it ideal for battery-operated devices. This SRAM operates from a single 5V power supply, simplifying system design and reducing the number of required components. The TTL-compatible input and output levels enable seamless integration with standard logic circuits. The three-state outputs allow for easy memory expansion and sharing of the memory bus with other devices. The HM62256ALFPI12T also features a low data retention voltage, ensuring that data is preserved even when the power supply voltage drops. This makes it a reliable choice for applications where data integrity is critical. The device is available in a DIP32 package, which is a standard package for through-hole mounting on printed circuit boards. This makes it easy to integrate into existing systems or new designs. The HM62256ALFPI12T is a versatile and reliable SRAM suitable for a wide range of memory applications, combining high speed, low power consumption, and ease of integration.