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Same model may have multiple batches, images only for reference.
HGTG27N60C3R
Same model may have multiple batches, images only for reference.

HGTG27N60C3R

Part No HGTG27N60C3R
Manufacturer Harris Corporation
Catalog IGBTs - Single
Description 54A, 600V, RUGGED N-CHANNEL IGBT
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Harris Corporation
Package Bulk
Product Status Active
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 54 A
Current - Collector Pulsed (Icm) 108 A
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 27A
Power - Max 208 W
Input Type Standard
Gate Charge 212 nC
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 873543-HGTG27N60C3R
Ultra Librarian 3D Model Ultra Librarian HGTG27N60C3R CAD Model

Description

The HGTG27N60C3R is a single IGBT transistor designed for use in discrete semiconductor products. It has a maximum power rating of 208W and a collector-emitter breakdown voltage (Vce) of 600V.

  • Transistor Type: IGBT
  • Power Dissipation (Max): 208W
  • Collector-Emitter Breakdown Voltage (Vce): 600V
  • Collector Current (Ic): 54A
  • Pulsed Current (Icm): 108A
  • On-State Voltage (Vce(on)): 2.2V @ 15V gate-emitter voltage (Vge) and 27A collector current (Ic)
  • Mounting Type: through hole
  • Package: TO-247-3
  • Gate Charge: 212nC
  • Operating Temperature: -40°C to 150°C
  • Status: active
  • Manufacturer: Harris Corporation

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16+ $22.6114 $361.7824
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