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Same model may have multiple batches, images only for reference.
GDP30S120B Global Power Technologies Group
Same model may have multiple batches, images only for reference.

GDP30S120B

Part No GDP30S120B
Manufacturer Global Power Technologies Group
Catalog Diodes, Rectifiers - Single
Description DIODE SCHOTTKY 1.2KV 30A TO247-2
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Global Power Technologies Group
Packaging Tube
Part Status Obsolete (End Of Life)
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Maximum) 1200V
Current - Average Rectified (Io) 30A (DC)
Voltage - Forward (Vf) (Maximum) at If 1.7V at 30A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0ns
Current - Reverse Leakage at Vr 100μA at 1200V
Capacitance at Vr, F 1790pF at 1V, 1MHz
Mounting Style Through Hole
Manufacturer Package TO-247-2
Supplier Device Package TO-247-2
Operating Temperature - Junction -55°C ~ 135°C
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 812549-GDP30S120B
Ultra Librarian 3D Model Ultra Librarian GDP30S120B CAD Model

Description

The Global Power Technologies Group GDP30S120B is a silicon carbide Schottky diode with a maximum voltage of 1200V and a forward voltage of 1.7V @ 30A.

  • Current Average Rectified (Io): 30A (DC)
  • Reverse Recovery Time (trr): 0ns
  • Operating Temperature Range: -55°C to 135°C
  • Package Quantity: 30
  • MSL Level: 1 (Unlimited)
  • Capacitance: 1790pF @ 1V, 1MHz

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