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Same model may have multiple batches, images only for reference.
MUR20005CTR
Same model may have multiple batches, images only for reference.

MUR20005CTR

Part No MUR20005CTR
Manufacturer GeneSiC Semiconductor
Catalog Diodes, Rectifiers - Arrays
Description DIODE MODULE 50V 100A 2TOWER / Diode Array 1 Pair Common Anode Schottky 50 V 100A Chassis Mount Twin Tower
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Diodes - Rectifiers - Arrays
Mfr GeneSiC Semiconductor
Package Bulk
Product Status Obsolete
Diode Configuration 1 Pair Common Anode
Diode Type Schottky
Voltage - DC Reverse (Vr) (Max) 50 V
Current - Average Rectified (Io) (per Diode) 100A
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 100 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 75 ns
Current - Reverse Leakage @ Vr 25 µA @ 50 V
Operating Temperature - Junction -55°C ~ 150°C
Mounting Type Chassis Mount
Package / Case Twin Tower
Supplier Device Package Twin Tower
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.10.0080
Other Names MUR20005CTRGN
Standard Package 25
Win Source Part Number 1081151-MUR20005CTR
Ultra Librarian 3D Model Ultra Librarian MUR20005CTR CAD Model

Description

The GeneSiC Semiconductor MUR20005CTR is a Schottky diode with a current rating of 100A and a reverse leakage current of 25μA @ 50V.

  • Current Rating: 100A
  • Reverse Leakage Current: 25μA @ 50V
  • Voltage Drop: 1.3V @ 100A
  • Reverse Recovery Time: 75ns
  • Package: Twin tower package
  • Mounting Type: Chassis mounted
  • Operating Temperature Range: -55°C to 150°C
  • Category: Discrete semiconductor products
  • Status: Obsolete

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