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Same model may have multiple batches, images only for reference.
G2R1000MT17J GeneSiC Semiconductor
Same model may have multiple batches, images only for reference.

G2R1000MT17J

Part No G2R1000MT17J
Manufacturer GeneSiC Semiconductor
Catalog FETs - Single
Description SIC MOSFET N-CH 3A TO263-7
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1203000-G2R1000MT17J
Manufacturer GeneSiC Semiconductor
Category Discrete Semiconductor Products -Transistors FETs, MOSFET- Single FETs, MOSFETs
Series G2R™
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Vgs(th) (Max) @ Id 4V @ 2mA
Power Dissipation (Max) 54W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Ultra Librarian 3D Model Ultra Librarian G2R1000MT17J CAD Model

Description

The GeneSiC Semiconductor G2R™ is a series of N-Channel SiCFET (Silicon Carbide) transistors.

  • Channel Type: N-Channel SiCFET
  • Gate-Source Threshold Voltage (Vgs(th)): 4V @ 2mA
  • Power Dissipation (Max): 54W @ Tc = -55°C to 175°C
  • Package: Tube

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $3.9619 $51.5047
31+ $3.2508 $100.7748
48+ $3.1493 $151.1664
66+ $3.0477 $201.1482
85+ $2.9461 $250.4185
114+ $2.6413 $301.1082
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Availability: 200 pieces
MOQ: 13 pcs
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