The FMP11N60E is an N-channel power MOSFET manufactured by Fuji Electric. This MOSFET is designed for high-efficiency switching applications. It features fast-switching performance due to an optimized design and low gate charge, and is available in a TO-220F package.

Applications:

• Switch Mode Power Supplies (SMPS)
• Power Factor Correction (PFC) circuits
• Uninterruptible Power Supplies (UPS)
• High-voltage DC-DC converters
• Lighting ballasts

Features:

• High voltage capability: 600V
• Low on-resistance (RDS(on))
• Fast switching speed
• Low gate charge (Qg)
• Avalanche energy rated
• RoHS compliant
• TO-220F package for isolated mounting

Benefits:

• Improved efficiency in power supplies due to low RDS(on) and fast switching.
• Reduced power loss and heat generation, leading to a more reliable system.
• Simplified thermal management with the TO-220F package and isolated mounting tab.
• Enhanced system reliability due to the avalanche energy rating.
• Compliance with environmental regulations.

Technical Specifications:

The FMP11N60E has a drain-source voltage (VDS) of 600V and a continuous drain current (ID) of 11A. The on-resistance (RDS(on)) is typically low, minimizing conduction losses. Gate charge (Qg) is minimized for fast switching. The device is available in a TO-220F package with a typical thermal resistance junction-to-case value.